Dielectric properties of c-axis oriented Zn{sub 1-x}Mg{sub x}O thin films grown by multimagnetron sputtering
- Department of Instrumentation, Indian Institute of Science, Bangalore 560012 (India)
Zn{sub 1-x}Mg{sub x}O (x=0.3) thin films have been fabricated on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn{sub 1-x}Mg{sub x}O films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 deg. C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn{sub 1-x}Mg{sub x}O thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 {mu}C/cm{sup 2} and coercive field of 8 kV/cm at room temperature.
- OSTI ID:
- 20883183
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 8; Other Information: DOI: 10.1063/1.2266891; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CRYSTAL GROWTH
CURIE POINT
ELECTRIC CONDUCTIVITY
FERROELECTRIC MATERIALS
GRAIN ORIENTATION
HYSTERESIS
MAGNESIUM OXIDES
PERMITTIVITY
PLATINUM
POLARIZATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TITANIUM OXIDES
ZINC COMPOUNDS