Control of structure, conduction behavior, and band gap of Zn{sub 1-x}Mg{sub x}O films by nitrogen partial pressure ratio of sputtering gases
- Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China) and Department of Physics, Jilin University, Changchun 130023 (China)
Zn{sub 1-x}Mg{sub x}O films were grown by radio-frequency reactive magnetron sputtering using mixture of nitrogen and argon as sputtering gases. It was found that Mg concentration, structures, electrical properties, and band gaps of the films can be tuned by changing nitrogen partial pressure ratio of the sputtering gases. The Zn{sub 1-x}Mg{sub x}O film consists of wurtzite phase at the ratios from 0% to 50%, mixture of wurtzite and cubic phases at the ratios of 78% to 83%, and cubic phase at 100%. The Mg concentration increased linearly with increasing the ratio. The band gap increases from 3.64 eV at x=0.172 to 4.02 eV at x=0.44 for the wurtzite Zn{sub 1-x}Mg{sub x}O and reaches 6.30 eV for cubic Zn{sub 1-x}Mg{sub x}O with x=0.84. All the as-grown Zn{sub 1-x}Mg{sub x}O films show high resistivity at room temperature, but transform into p-type conduction after annealing at 600 deg. C for 30 min under 10{sup -4} Pa, except for the film grown at the ratio of zero.
- OSTI ID:
- 20880197
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 89; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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