Spatially resolved thickness analysis of microscale structures using micro-Raman spectroscopy
- Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)
A novel method, by using micro-Raman spectroscopy, is developed to measure the thickness of microelectromechanical system structures with high spatial resolution. When a microscale structure is heated by a laser, the temperature rise of the structure depends on the structure thickness and material properties. Therefore, the structure thickness can be measured using Raman shift, which is a function of temperature. Micro-Raman spectrometer is capable of measuring the thickness distribution of microscale structures with micron spatial resolution. This technique is evaluated by characterizing the thickness distribution of a single-crystal silicon (c-Si) membrane. The measured thickness distributions are verified by scanning electron microscope measurement.
- OSTI ID:
- 20880094
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 21; Other Information: DOI: 10.1063/1.2396908; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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