Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

Journal Article · Mon Oct 30 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2374849· OSTI ID:20880075

Kanno, Hiroshi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu ^[1]

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1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO{sub 2} has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 deg. C). High temperature annealing (>500 deg. C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 deg. C). As a result, large poly-SiGe regions (>20 {mu}m) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%)

• OSTI ID: 20880075
• Journal Information: Applied Physics Letters, Vol. 89, Issue 18; Other Information: DOI: 10.1063/1.2374849; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
CRYSTALLIZATION
GERMANIUM ALLOYS
GERMANIUM SILICIDES
NUCLEATION
SEMICONDUCTOR MATERIALS
SILICA
SILICON ALLOYS
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS