skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Single-Nucleus Polycrystallization in Thin Film Epitaxial Growth

Abstract

We have observed, by use of low-energy electron microscopy, the first direct evidence of self-driven polycrystallization evolved from a single nucleus in the case of epitaxial pentacene growth on the Si(111)-H terminated surface. In this Letter we demonstrate that such polycrystallization can develop in anisotropic systems (in terms of crystal structure and/or the intermolecular interactions) when kinetic growth conditions force the alignment of the intrinsic preferential growth directions along the density gradient of diffusing molecules. This finding gives new insight into the crystallization of complex molecular systems, elucidating the importance of nanoscale control of the growth conditions.

Authors:
; ; ; ; ;  [1];  [1];  [2];  [3]
  1. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
  2. (Japan)
  3. IBM Research Division, T. J. Watson Research Center, 1101 Kitachawan Road, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
20861648
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 4; Other Information: DOI: 10.1103/PhysRevLett.98.046104; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON MICROSCOPY; EPITAXY; NANOSTRUCTURES; NUCLEI; PENTACENE; POLYCRYSTALS; THIN FILMS

Citation Formats

Sadowski, J. T., Nishikata, S., Al-Mahboob, A., Fujikawa, Y., Nakajima, K., Sakurai, T., Sazaki, G., Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, and Tromp, R. M. Single-Nucleus Polycrystallization in Thin Film Epitaxial Growth. United States: N. p., 2007. Web. doi:10.1103/PHYSREVLETT.98.046104.
Sadowski, J. T., Nishikata, S., Al-Mahboob, A., Fujikawa, Y., Nakajima, K., Sakurai, T., Sazaki, G., Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, & Tromp, R. M. Single-Nucleus Polycrystallization in Thin Film Epitaxial Growth. United States. doi:10.1103/PHYSREVLETT.98.046104.
Sadowski, J. T., Nishikata, S., Al-Mahboob, A., Fujikawa, Y., Nakajima, K., Sakurai, T., Sazaki, G., Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, and Tromp, R. M. Fri . "Single-Nucleus Polycrystallization in Thin Film Epitaxial Growth". United States. doi:10.1103/PHYSREVLETT.98.046104.
@article{osti_20861648,
title = {Single-Nucleus Polycrystallization in Thin Film Epitaxial Growth},
author = {Sadowski, J. T. and Nishikata, S. and Al-Mahboob, A. and Fujikawa, Y. and Nakajima, K. and Sakurai, T. and Sazaki, G. and Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578 and Tromp, R. M.},
abstractNote = {We have observed, by use of low-energy electron microscopy, the first direct evidence of self-driven polycrystallization evolved from a single nucleus in the case of epitaxial pentacene growth on the Si(111)-H terminated surface. In this Letter we demonstrate that such polycrystallization can develop in anisotropic systems (in terms of crystal structure and/or the intermolecular interactions) when kinetic growth conditions force the alignment of the intrinsic preferential growth directions along the density gradient of diffusing molecules. This finding gives new insight into the crystallization of complex molecular systems, elucidating the importance of nanoscale control of the growth conditions.},
doi = {10.1103/PHYSREVLETT.98.046104},
journal = {Physical Review Letters},
number = 4,
volume = 98,
place = {United States},
year = {Fri Jan 26 00:00:00 EST 2007},
month = {Fri Jan 26 00:00:00 EST 2007}
}
  • The epitaxial growth of a Bi{sub 2}Sr{sub 2}CuO{sub 6} (2201) thin film on a Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} (2212) single crystal has been performed using computer-controlled laser molecular beam epitaxy. The surface of the 2212 single crystal used as the substrate is smooth and invariant under the growth condition at 640 {degree}C in NO{sub 2} pressure of 1{times}10{sup {minus}5} mbar. The growth process of the 2201 film has been observed by {ital in} {ital situ} reflection high-energy electron diffraction (RHEED), and the layer-by-layer growth of the 2201 phase is confirmed by the oscillation of RHEED intensities. During the growth,more » a modulated surface structure which is characteristic of the Bi cuprate crystals is always present.« less
  • As part of an effort to develop a new, non-vacuum-processed substrate for high current superconducting films, thin films of LaAlO{sub 3} and NdAlO{sub 3} were deposited on biaxially textured (100) nickel substrates using a solution deposition technique. On heating to 1150 C in Ar-4% H{sub 2} for 1 h, epitaxial films were obtained. Out-of-plane alignment was confirmed by obtaining rocking curves of the (002) plane of the LaAlO{sub 3} (full width at half-maximum (fwhm) = 7.2{degree}) and the NdAlO{sub 3} (fwhm = 5.8{degree}) films. In-plane alignment was demonstrated by obtaining phi scans of the (110) plane of the LaAlO{sub 3}more » (fwhm = 13.4{degree}) and the NdAlO{sub 3} (fwhm = 8.8{degree}) films. Grain alignment in the films is approximately equivalent to the alignment of the Ni substrate. Analysis of pole figures indicated that in both films there are two-in-plane orientations present, the major being (001)[100] and the minor (001)[110].« less
  • In this article we describe a method for direct epitaxial growth of thin-film structures using a combination of resistless electron beam lithography and supersonic molecular beam epitaxy. Electron beam irradiation of a surface hydride layer on silicon induces hydrogen desorption and hence alters the surface reactivity of the exposed area. Introduction of a source gas concurrently with, or immediately following electron beam exposure results in a pattern formation on the exposed area. Continuous silicon oxide patterns with linewidths below 0.1 {mu}m have been achieved. The resulting pattern can be also used as a mask for subsequent selective growth on themore » unexposed area. Supersonic molecular beam epitaxy is a highly nonequilibrium film growth method that uses translationally hot source gas species generated by a high pressure gas expansion. Since the reactivity of the source gas molecules depends exponentially on the incident kinetic energy, the chemical selectivity of the film growth process can be altered by tuning the incident kinetic energy. Arbitrary patterns with linewidths on the order of 0.1 {mu}m have been achieved with Si, Ge, and SiC epitaxy on Si (100) and Si epitaxy on Ge (100). {copyright} {ital 1997 American Vacuum Society.}« less
  • CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) imagesmore » show that the CdTe domains are 30 degrees orientated from each other.« less