Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

Journal Article · Mon Oct 09 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2360916· OSTI ID:20860982

Shi, B M; Xie, M H; Wu, H S; Wang, N; Tong, S Y ^[1]

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1. Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China)

GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE.

• OSTI ID: 20860982
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
DEPOSITION
FILMS
GALLIUM
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN
NUCLEATION
PHASE TRANSFORMATIONS
SEMICONDUCTOR MATERIALS
SUBSTRATES
ZINC SULFIDES