High structural quality InN/In{sub 0.75}Ga{sub 0.25}N multiple quantum wells grown by molecular beam epitaxy

Journal Article · Mon Jul 24 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2221869· OSTI ID:20860592

Ohashi, Tatsuo; Holmstroem, Petter; Kikuchi, Akihiko; Kishino, Katsumi ^[1]

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1. Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

InN/In{sub 0.75}Ga{sub 0.25}N multiple quantum wells (MQWs) were grown by rf plasma-assisted molecular beam epitaxy. The high-resolution transmission electron microscope and x-ray diffraction measurements showed evidence of growth of atomically smooth and sharp interface and good periodicity. Room-temperature photoluminescence emissions from InN quantum wells were observed at the wavelength range from 1.59 to 1.95 {mu}m by changing the well thickness. The unstrained valence band offset of InN/GaN was estimated to be {delta}E{sub v}=0.9 eV by comparing the experimental transition wavelengths of the MQWs and a theoretical calculation considering strain effects and built-in, mainly piezoelectric, fields.

• OSTI ID: 20860592
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
PERIODICITY
PHOTOLUMINESCENCE
PIEZOELECTRICITY
PLASMA
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION