Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature

Journal Article · Wed Nov 15 00:00:00 EST 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.74.193308· OSTI ID:20853881

Sellers, I R; Semond, F; Leroux, M; Massies, J; Zamfirescu, M; Stokker-Cheregi, F; Gurioli, M; Vinattieri, A; Colocci, M; Tahraoui, A; Khalifa, A A ^[1]

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1. CRHEA-CNRS, Rue Bernard Gregory, Valbonne 06560 (France)

We demonstrate strong light-matter coupling at room temperature in a GaN microcavity using simultaneous reflectivity and photoluminescence measurements. At 10 K strong coupling is also observed in both measurements despite the well-known dominance of GaN emission at low temperature by localized neutral donor bound excitons. In addition, the strong light-matter coupling regime is studied as a function of temperature with the tuning of the polariton modes, in this case a result due to the dominant redshift of the excitonlike branch with increasing temperature.

• OSTI ID: 20853881
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 74, Issue 19; Other Information: DOI: 10.1103/PhysRevB.74.193308; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOUND STATE
COUPLING
EXCITONS
GALLIUM NITRIDES
PHOTOLUMINESCENCE
POLARONS
RED SHIFT
REFLECTIVITY
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
VISIBLE RADIATION