Characterization of fluorine-modified organosilicate glass
- Department of Applied Physics, National Chia Yi University, Chia Yi, Taiwan (China)
In this study, fluorine-modified organosilicate glass (F-OSG) films were deposited by using a plasma-enhanced chemical vapor deposition technique on 3MS/O{sub 2}/SiF{sub 4} mixtures to change deposition temperatures. The films were characterized by using reflectometer data, Fourier transformation infrared spectroscopy, and x-ray photoelectron spectroscopy. The authors found that film deposition rates and fluorine contents in the F-OSG films decreased while the deposition temperature increased; moreover, negative apparent activation energies for film deposition were also observed, suggesting a deposition process dominated by surface adsorption/desorption reactions. In addition, the authors also investigated the effects of Si-C and Si-F bonding on the dielectric breakdown and leakage mechanism of the F-OSG films. They found that high and two-step breakdown voltage of the F-OSG films relative to that of the OSG films can be highlighted as a consequence of the structural change accompanied by the incorporation of fluorine, and hence the leakage current behavior of F-OSG in low field conduction is well explained by the Schottky emission.
- OSTI ID:
- 20853795
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 6; Other Information: DOI: 10.1116/1.2348644; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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