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Origin of ferromagnetism in semiconducting (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
; ;  [1]; ; ;  [2];  [3];  [4];  [1]
  1. SRI International, 333 Ravenswood Avenue, Menlo Park, California 94025 (United States)
  2. Intematix Corporation, 46410 South Fremont Boulevard, Fremont, California 94538 (United States)
  3. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States)
  4. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
We systematically measure and analyze x-ray absorption fine structure and the anomalous Hall effect of recently discovered room-temperature ferromagnetic semiconductor thin films (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}. The x-ray fine structure demonstrates that divalent Fe ions exist in ferromagnetic samples but not in nonmagnetic ones, suggesting a mobile-electron-mediated ferromagnetism. The anomalous Hall behavior is found to be consistent with that of ferromagnets, in which carriers are delocalized, but qualitatively different from that of double-exchange manganites, in which carriers are bound to magnetic ions, confirming that the ferromagnetism in (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}} is mediated by mobile electrons.
OSTI ID:
20853776
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 16 Vol. 74; ISSN 1098-0121
Country of Publication:
United States
Language:
English