Origin of ferromagnetism in semiconducting (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- SRI International, 333 Ravenswood Avenue, Menlo Park, California 94025 (United States)
- Intematix Corporation, 46410 South Fremont Boulevard, Fremont, California 94538 (United States)
- Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States)
- Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
We systematically measure and analyze x-ray absorption fine structure and the anomalous Hall effect of recently discovered room-temperature ferromagnetic semiconductor thin films (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}. The x-ray fine structure demonstrates that divalent Fe ions exist in ferromagnetic samples but not in nonmagnetic ones, suggesting a mobile-electron-mediated ferromagnetism. The anomalous Hall behavior is found to be consistent with that of ferromagnets, in which carriers are delocalized, but qualitatively different from that of double-exchange manganites, in which carriers are bound to magnetic ions, confirming that the ferromagnetism in (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}} is mediated by mobile electrons.
- OSTI ID:
- 20853776
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 16 Vol. 74; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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