Interplay between the Coulomb explosion and vicinage effects studied using H{sub 2}{sup +} molecules under channeling conditions

Journal Article · Thu Jun 15 04:00:00 EDT 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.73.245336· OSTI ID:20853270

Fadanelli, R C; Grande, P L; Behar, M; Dias, J F; Czerski, K; Schiwietz, G ^[1]

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1. Instituto de Fisica, Federal University of Rio Grande do Sul, Avenida Bento Goncalves, 9500, CEP 91501-970 Porto Alegre (Serbia) (Brazil)

The aim of this work is to investigate how the mean energy loss and straggling due to H{sub 2}{sup +} molecules interacting with silicon are affected by the Coulomb explosion and vicinage effects. To that end, a SIMOX-type sample made up of {sup 18}O and with an appropriate {sup 18}O marker grown over the surface of crystalline Si was employed, allowing to carry out the measurements through the {sup 18}O(p,{alpha}){sup 15}N resonant reaction at 151.2 keV under channeling and random directions. The results show that the mean energy loss associated with the Coulomb explosion and vicinage effects are similar and amount each to about 2% of the total mean energy loss. The comparison of the energy straggling obtained for molecular beams at random and the well-aligned <100> direction shows a larger value for the aligned case, which is interpreted as a result of the Coulomb explosion along the channel direction. The experimental results are also discussed in terms of Monte Carlo simulations.

• OSTI ID: 20853270
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 24 Vol. 73; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHANNELING
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
COULOMB EXCITATION
COULOMB FIELD
HYDROGEN IONS 2 PLUS
KEV RANGE
MOLECULAR BEAMS
MOLECULES
MONTE CARLO METHOD
NITROGEN 15
OXYGEN 18
RANDOMNESS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES