Theoretical analysis of a realistic atom-chip quantum gate
- Laboratoire de Photophysique Moleculaire du CNRS, Ba circumflex timent 210, Universite Paris-Sud, 91405 Orsay Cedex (France)
- ECT, Strada delle Tabarelle 286, I-38050 Villazzano, Trento, Italy and Dipartimento di Fisica, Universita di Trento, and BEC-CNR-INFM, I-38050 Povo (Italy)
- Physikalisches Institut, Universitaet Heidelberg, 69120 Heidelberg (Germany)
We present a detailed, realistic analysis of the implementation of a proposal for a quantum phase gate based on atomic vibrational states, specializing it to neutral rubidium atoms on atom chips. We show how to create a double-well potential with static currents on the atom chips, using for all relevant parameters values that are achieved with present technology. The potential barrier between the two wells can be modified by varying the currents in order to realize a quantum phase gate for qubit states encoded in the atomic external degree of freedom. The gate performance is analyzed through numerical simulations; the operation time is {approx}10 ms with a performance fidelity above 99.9%. For storage of the state between the operations the qubit state can be transferred efficiently via Raman transitions to two hyperfine states, where its decoherence is strongly inhibited. In addition we discuss the limits imposed by the proximity of the surface to the gate fidelity.
- OSTI ID:
- 20852878
- Journal Information:
- Physical Review. A, Vol. 74, Issue 1; Other Information: DOI: 10.1103/PhysRevA.74.012308; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microwave potentials and optimal control for robust quantum gates on an atom chip
Enriching the Quantum Toolbox of Ultracold Molecules with Rydberg Atoms