Properties of ZnO:Al thin films for solar cells by pyrosol method

Book · Sat Dec 31 00:00:00 EST 1994

OSTI ID:208144

Song, J; Yoon, K H; Yu, G J ^[1]; Cho, W Y; Lim, K S ^[2]

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1. Korea Inst. of Energy Research, Taejon (Korea, Republic of)
2. Korea Advanced Inst. of Science and Technology, Taejon (Korea, Republic of)

Undoped and aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared on heated Corning 7059 glass substrates by pyrosol method under various deposition conditions. The effects of the different deposition variables and annealing in vacuum of ZnO thin films have been investigated by analyzing the electrical, optical, and compositional changes of the films. The results indicate that it is possible to obtain ZnO:Al thin films with a transmittance at about 80% and a resistivity as low as 3.5 {times} 10{sup {minus}3} {Omega}cm. Furthermore, it was also found that the films are stable in hydrogen plasma (within the exposure time of 10 minutes).

• OSTI ID: 208144
• Report Number(s): CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%472
• Resource Relation: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON SOLAR CELLS
ANTIREFLECTION COATINGS
ZINC OXIDES
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
DOPED MATERIALS
ALUMINIUM ADDITIONS
CHEMICAL COMPOSITION
LIGHT TRANSMISSION
PYROLYSIS
ZINC COMPOUNDS
ACETATES
ELECTRIC CONDUCTIVITY
CARRIER DENSITY
CARRIER MOBILITY
X-RAY DIFFRACTION
TEMPERATURE DEPENDENCE
EXPERIMENTAL DATA