Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

Conference ·
OSTI ID:208074
; ; ;  [1]
  1. Colorado School of Mines, Golden, CO (United States). Dept. of Physics

Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density J{sub dep} = 0.33--0.40 mA/cm{sup 2}, the anode current ratio R{sub Te/Cd} = 2.7, and the deposition potential V{sub dep} = {minus}600 mV against a Ag/AgCl reference electrode. CdCl{sub 2} treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl{sub 2}-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage V{sub oc} up to 0.78 V. 11.0% CdS/CdTe/Au dot cells (0.033 cm{sup 2}) have been produced in this work.

OSTI ID:
208074
Report Number(s):
CONF-941203--; ISBN 0-7803-1459-X
Country of Publication:
United States
Language:
English