The low temperature deposition of ICB-grown CuInSe{sub 2} thin films

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208037

Sano, Hiroyuki; Nakamura, Susumu; Kondo, Kenichi ^[1]; Sato, Katsuaki ^[2]

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1. Stanley Electric Co., Ltd., Yokohama, Kanagawa (Japan)
2. Tokyo Univ. of Agriculture and Technology, Koganei, Tokyo (Japan). Faculty of Technology

Superstrate-type solar cells were successfully fabricated for the first time using the CuInSe{sub 2} thin films prepared by the ICB (ionized cluster beam) technique. The substrate temperature was as low as 300 C. The films were characterized by EPMA, X-ray diffraction and PL spectrum. SEM micrographs and photovoltaic properties were also investigated on the solar cells. As the results show, those films had nearly stoichiometric composition with grain size of about 1 {micro}m. The superstrate-type solar cells showed the conversion efficiency of 2.06%.

• OSTI ID: 208037
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
ELECTRON MICROPROBE ANALYSIS
ENERGY BEAM DEPOSITION
ENERGY BEAM DEPOSITION FILMS
FABRICATION
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
PERFORMANCE
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY