Superstrate-type CuInSe{sub 2} solar cells with chemically deposited CdS window layers

Book · Fri Dec 30 23:00:00 EST 1994

OSTI ID:208018

Nakada, Tokio; Okano, Nobukata; Tanaka, Yoshiyuki; Fukuda, Hiroyuki; Kunioka, Akio ^[1]

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1. Aoyama Gakuin Univ., Tokyo (Japan). Dept. of Electrical Engineering and Electronics

Chemically deposited CdS was used for window layers of superstrate-type CIS solar cells. The CBD-CdS layers had no pinholes and had higher optical transmission at short wavelengths than evaporated CdS layers, which led to the increase in Jsc. Relatively high substrate temperature of 450 C was used for CIS deposition, resulting in high Voc due to improved crystallinity of CIS films. However, the interdiffusion and alloy formation at CIS/CdS deteriorated cell performance. The best cell yielded an efficiency of 8.1% with Voc = 440 mV, Jsc = 34 mA/cm{sup 2} and FF = 0.54 using near-stoichiometric (Cu/In = 0.91--0.98) CIS films.

• OSTI ID: 208018
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM
ANTIREFLECTION COATINGS
CADMIUM IODIDES
CADMIUM SULFIDES
CHEMICAL COATING
COPPER SELENIDE SOLAR CELLS
CRYSTAL STRUCTURE
CURRENT DENSITY
ELECTRIC POTENTIAL
ENERGY EFFICIENCY
EXPERIMENTAL DATA
FABRICATION
GLASS
INDIUM SELENIDE SOLAR CELLS
INTERFACES
LIGHT TRANSMISSION
SCANNING ELECTRON MICROSCOPY
SPECTRAL RESPONSE
THIOUREA
ZINC OXIDES