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Title: Characterization of Vacancy Defects in Electroplated Cu Films by Positron Annihilation and its Impact on Stress Migration Reliability

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2173550· OSTI ID:20798178
; ;  [1];  [2];  [3];  [1]
  1. Fujitsu Laboratories LTD. Akiruno Technology Center 50 Fuchigami, Akiruno, Tokyo, 197-0833 (Japan)
  2. Fujitsu LTD. Akiruno Technology Center 50 Fuchigami, Akiruno, Tokyo, 197-0833 (Japan)
  3. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

Positron annihilation was used to evaluate vacancy concentrations in electroplated Cu films with different kinds of electrolytes. The influence of various electrolytes on the impurities, grain boundaries, and micro-voids were also investigated. We found a higher impurity concentration and larger micro-voids were observed in copper films with higher vacancy concentrations. We reduced the failure rate in our stress migration results using a copper film with a higher concentration of vacancy and impurity. The stress migration performance improved because impurity nucleated vacancy clusters act as effective traps for diffusing vacancies.

OSTI ID:
20798178
Journal Information:
AIP Conference Proceedings, Vol. 817, Issue 1; Conference: 8. international workshop on stress-induced phenomena in metallization, Dresden (Germany), 12-14 Sep 2005; Other Information: DOI: 10.1063/1.2173550; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English