Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs{sub 1-x}N{sub x} on GaAs

Journal Article · Mon May 15 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2199976· OSTI ID:20795818

Cheah, W K; Fan, W J; Yoon, S F; Loke, W K; Liu, R; Wee, A T.S. ^[1]

---

1. Nanyang Technological University, School of Electrical and Electronic Engineering, Block S1, Nanyang Avenue, Singapore 639798 (Singapore)

Low-temperature (10 K) photoluminescence measurements of GaAs{sub 1-x}N{sub x} epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing (RTA) of a specific GaAsN sample reveals a lower energy peak ({gamma}) which redshifts and a higher energy peak ({alpha}) which blueshifts under increasing annealing temperature. The band-anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The {gamma} peak is due to the accumulation of N content near the GaAs/GaAsN interface. Hence, this abnormal annealing behavior occurs in layers with nonuniform N concentration at the GaAsN/GaAs interface.

• OSTI ID: 20795818
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL ANALYSIS
CRYSTAL GROWTH
GALLIUM ARSENIDES
GALLIUM NITRIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RED SHIFT
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TRAPPING