Evolution of patterned GaAs(001) during homoepitaxial growth: Size versus spacing
- Department of Physics, University of Maryland, College Park, Maryland 20740 (United States)
- Department of Mechanical Engineering, University of Maryland, College Park, Maryland 20740 (United States)
- Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20740 (United States)
- Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)
We report an extended experimental characterization of the transient evolution of the surface morphology of patterned GaAs(001) surfaces during homoepitaxial growth [Phys. Rev. Lett. 92, 146101 (2004)]. The size and the periodicity in the patterned structures are varied independently. Our results indicate different, nonmonotonic dependences of the evolution on these two characteristic distances. Numerical simulations of the growth based upon the conserved KPZ equation [Phys. Rev. A 40, 6763 (1989)] reproduce qualitatively the very different size and spacing dependences we observe during growth. We speculate on a physically based scenario in which a reduced collection efficiency on narrow terraces during growth breaks the up-down symmetry in the evolution of the surface topography.
- OSTI ID:
- 20788188
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 19; Other Information: DOI: 10.1103/PhysRevB.73.195410; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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