Electron spin resonance g shift in Gd{sub 5}Si{sub 4}, Gd{sub 5}Ge{sub 4}, and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}
- Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, UNICAMP, Caixa Postale 6165, 13083-970, Campinas, Sao Paulo (Brazil)
Gd{sub 5}Si{sub 4}, Gd{sub 5}Ge{sub 4}, and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88} compounds were studied by electron spin resonance. The arc-melted samples were initially characterized by optical metallography, x-ray diffraction, and static magnetization measurements. The electron spin resonance results show a negative paramagnetic g shift for Gd{sub 5}Si{sub 4} and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}, and a smaller positive one for Gd{sub 5}Ge{sub 4}. The values of the exchange parameter (j) between the localized Gd-4f spins and the conduction electrons are obtained from the g shifts. These values are positive and of the same order of magnitude for Gd{sub 5}Si{sub 4} and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}, and negative one order of magnitude smaller for Gd{sub 5}Ge{sub 4}. The electron spin resonance data were interpreted considering the strongly bottlenecked solution of the coupled Bloch-Hasegawa equations.
- OSTI ID:
- 20788056
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 14; Other Information: DOI: 10.1103/PhysRevB.73.144404; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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