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Title: Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study

Abstract

InAs/GaAs quantum dots (QD's) are formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness for the transition from two- (2D) to three-dimensional (3D) growth mode. Reflection high energy electron diffraction is used to monitor the QD formation. Based on a mean-field theory [Phys. Rev. Lett. 79, 897 (1997)], the time evolution of total QD's volume, first increasing and finally saturating, is well explained by precursors forming during wetting layer growth and converting into nucleated QD's after growth stop. Both the saturation QD's volume and the QD nucleation rate depend exponentially on the InAs coverage. These behaviors and their temperature and InAs growth rate dependences are essentially understandable in the frame of the mean-field theory. Similar analysis to conventional QD growth suggests that the often observed significant mass transport from wetting layer to QD's can be ascribed to the precursors existing before 2D-3D growth mode transition.

Authors:
; ; ; ; ;  [1];  [2];  [2];  [2]
  1. Nanotechnology Research Center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa 243-0197 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20788008
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 73; Journal Issue: 11; Other Information: DOI: 10.1103/PhysRevB.73.115327; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CRYSTAL GROWTH; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MEAN-FIELD THEORY; NUCLEATION; QUANTUM DOTS; REFLECTION; SEMICONDUCTOR MATERIALS

Citation Formats

Song, H. Z., Usuki, T., Nakata, Y., Yokoyama, N., Sasakura, H., Muto, S., and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Nanotechnology Research Center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa 243-0197, and Department of Applied Physics, Hokkaido University, Sapporo 060-8628, Japan, and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012. Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.73.1.
Song, H. Z., Usuki, T., Nakata, Y., Yokoyama, N., Sasakura, H., Muto, S., and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Nanotechnology Research Center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa 243-0197, & Department of Applied Physics, Hokkaido University, Sapporo 060-8628, Japan, and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012. Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study. United States. doi:10.1103/PHYSREVB.73.1.
Song, H. Z., Usuki, T., Nakata, Y., Yokoyama, N., Sasakura, H., Muto, S., and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Nanotechnology Research Center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa 243-0197, and Department of Applied Physics, Hokkaido University, Sapporo 060-8628, Japan, and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012. Wed . "Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study". United States. doi:10.1103/PHYSREVB.73.1.
@article{osti_20788008,
title = {Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study},
author = {Song, H. Z. and Usuki, T. and Nakata, Y. and Yokoyama, N. and Sasakura, H. and Muto, S. and and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012 and Nanotechnology Research Center, Fujitsu Lab. Ltd., Morinosato-Wakamiya 10-1, Atsugi, Kanagawa 243-0197 and Department of Applied Physics, Hokkaido University, Sapporo 060-8628, Japan, and CREST, Japan Science and Technology Agency, Kawaguchi 332-0012},
abstractNote = {InAs/GaAs quantum dots (QD's) are formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness for the transition from two- (2D) to three-dimensional (3D) growth mode. Reflection high energy electron diffraction is used to monitor the QD formation. Based on a mean-field theory [Phys. Rev. Lett. 79, 897 (1997)], the time evolution of total QD's volume, first increasing and finally saturating, is well explained by precursors forming during wetting layer growth and converting into nucleated QD's after growth stop. Both the saturation QD's volume and the QD nucleation rate depend exponentially on the InAs coverage. These behaviors and their temperature and InAs growth rate dependences are essentially understandable in the frame of the mean-field theory. Similar analysis to conventional QD growth suggests that the often observed significant mass transport from wetting layer to QD's can be ascribed to the precursors existing before 2D-3D growth mode transition.},
doi = {10.1103/PHYSREVB.73.1},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 11,
volume = 73,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}