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Title: Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica

Abstract

The effects of isochronal thermal treatments on three {gamma}-irradiation-induced point defects, named the E{sup '}, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO{sub 2}). ODC(II) is investigated by means of photoluminescence spectroscopy, and the H(I) and E{sup '} centers by electron paramagnetic resonance. The annealing processes of the ODC(II) and H(I) center are shown to be independent of each other, and no conversion mechanisms are evidenced. In contrast, a strong similarity is observed between the annealing curves of the ODC(II) and E{sup '} centers. We tentatively ascribe the annealing processes to reactions of the defects with radiolytically formed molecules. We suggest that the H(I) center reacts with molecular hydrogen diffusing through the matrix, whereas, by analogy with results reported in the literature about the E{sup '} center, the annealing of ODC(II) is attributed to reactions with molecular oxygen or water.

Authors:
;  [1]
  1. Dipartimento di Scienze Fisiche ed Astronomiche, University of Palermo, Via Archirafi 36, I-90123 Palermo (Italy)
Publication Date:
OSTI Identifier:
20788006
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 73; Journal Issue: 11; Other Information: DOI: 10.1103/PhysRevB.73.115203; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DIFFUSION; E CENTERS; ELECTRON SPIN RESONANCE; ELECTRONS; GAMMA RADIATION; H CENTERS; HYDROGEN; I CENTERS; IRRADIATION; MOLECULES; OXYGEN; PARAMAGNETISM; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POSITRONS; RADIOLYSIS; SILICA; SILICON OXIDES; WATER

Citation Formats

Agnello, S., and Nuccio, L. Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.73.1.
Agnello, S., & Nuccio, L. Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica. United States. doi:10.1103/PHYSREVB.73.1.
Agnello, S., and Nuccio, L. Wed . "Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica". United States. doi:10.1103/PHYSREVB.73.1.
@article{osti_20788006,
title = {Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica},
author = {Agnello, S. and Nuccio, L.},
abstractNote = {The effects of isochronal thermal treatments on three {gamma}-irradiation-induced point defects, named the E{sup '}, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO{sub 2}). ODC(II) is investigated by means of photoluminescence spectroscopy, and the H(I) and E{sup '} centers by electron paramagnetic resonance. The annealing processes of the ODC(II) and H(I) center are shown to be independent of each other, and no conversion mechanisms are evidenced. In contrast, a strong similarity is observed between the annealing curves of the ODC(II) and E{sup '} centers. We tentatively ascribe the annealing processes to reactions of the defects with radiolytically formed molecules. We suggest that the H(I) center reacts with molecular hydrogen diffusing through the matrix, whereas, by analogy with results reported in the literature about the E{sup '} center, the annealing of ODC(II) is attributed to reactions with molecular oxygen or water.},
doi = {10.1103/PHYSREVB.73.1},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 11,
volume = 73,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}