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Title: Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
DOI:https://doi.org/10.1103/PHYSREVB.73.1· OSTI ID:20788006
;  [1]
  1. Dipartimento di Scienze Fisiche ed Astronomiche, University of Palermo, Via Archirafi 36, I-90123 Palermo (Italy)

The effects of isochronal thermal treatments on three {gamma}-irradiation-induced point defects, named the E{sup '}, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO{sub 2}). ODC(II) is investigated by means of photoluminescence spectroscopy, and the H(I) and E{sup '} centers by electron paramagnetic resonance. The annealing processes of the ODC(II) and H(I) center are shown to be independent of each other, and no conversion mechanisms are evidenced. In contrast, a strong similarity is observed between the annealing curves of the ODC(II) and E{sup '} centers. We tentatively ascribe the annealing processes to reactions of the defects with radiolytically formed molecules. We suggest that the H(I) center reacts with molecular hydrogen diffusing through the matrix, whereas, by analogy with results reported in the literature about the E{sup '} center, the annealing of ODC(II) is attributed to reactions with molecular oxygen or water.

OSTI ID:
20788006
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 11; Other Information: DOI: 10.1103/PhysRevB.73.115203; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
Country of Publication:
United States
Language:
English