Temperature dependent refractive index of amorphous silicon determined by time-resolved reflectivity during low fluence excimer laser heating
- Physics Department, Acadia University, Wolfville, Nova Scotia BP4 2R6 (Canada)
The temperature dependent refractive index of amorphous silicon has been measured at a wavelength of 820 nm from room temperature up to nearly the melting point close to 1200 deg. C. The method employed is to use a single pulse from a XeCl excimer laser to heat the silicon without crystallizing it and to measure the transient reflectivity. This is then modeled by converting a calculated temperature profile into an effective multilayer structure and calculating the reflectivity using a transfer matrix formulation. The refractive index is optimized using simulated annealing. The real part of the refractive index is found to vary linearly with a temperature coefficient of 3.85x10{sup -4} while the extinction coefficient is found to vary as exp(3.82x10{sup -3}T), with T=0 at room temperature.
- OSTI ID:
- 20787974
- Journal Information:
- Journal of Applied Physics, Vol. 99, Issue 6; Other Information: DOI: 10.1063/1.2186378; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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