ZnSe interlayer effects on properties of (CdS/ZnSe)/BeTe superlattices grown by molecular beam epitaxy

Journal Article · Wed Feb 15 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2173686· OSTI ID:20787889

Li, B S; Akimoto, R; Akita, K; Hasama, T ^[1]

---

1. Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

We study the dependence of structural properties on the thickness of the ZnSe interlayer (IL) in (CdS/ZnSe)/BeTe superlattices (SLs); this is crucial for improving the growth mode in this heterostructure. The in situ reflection of high-energy electron diffraction oscillation and high-resolution x-ray diffraction spectra show a perfect structure that is obtained by introducing a ZnSe IL between CdS and BeTe. An intersubband transition (ISB-T) down to 1.57 {mu}m with a full width at half maximum of 90 meV has been observed in (CdS/ZnSe)/BeTe SLs. A strong ISB-T is observed when the ZnSe IL {>=}1 monolayer (ML); however, it completely disappears with the introduction of a 0.5 ML ZnSe IL in (CdS/ZnSe)/BeTe SLs. High-resolution transmission electron microscopy images reveal that a sharp interface is formed in the barrier and well transition region in the structure with ZnSe IL {>=}1 ML; however, the interfaces become rough and thick in those with a 0.5 ML ZnSe IL. This indicates that the properties of the interface in (CdS/ZnSe)/BeTe SLs play an important role in the performance of ISB absorption. A growth model is proposed to explain two-dimensional growth with the insertion of a ZnSe ML into the BeTe/CdS heterostructure. Based on this growth model, the properties of the interface in this structure are explained.

• OSTI ID: 20787889
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
BERYLLIUM ALLOYS
BERYLLIUM TELLURIDES
CADMIUM SULFIDES
CRYSTAL GROWTH
ELECTRON DIFFRACTION
MILLI EV RANGE
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
RESOLUTION
SEMICONDUCTOR MATERIALS
SUPERLATTICES
TELLURIUM ALLOYS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC SELENIDES