Predicting the amount of carbon in carbon nanotubes grown by CH{sub 4} rf plasmas
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, N14 W9, Sapporo 060-0814 (Japan)
Carbon nanotubes (CNTs) were grown on Si substrates by rf CH{sub 4} plasma-enhanced chemical vapor deposition in a pressure range of 1-10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. CH{sub 4} plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as CH{sub 3}, C{sub 2}H{sub 5}, and C{sub 2}H{sub 5}{sup +} was consistent with estimations from experimental results.
- OSTI ID:
- 20787786
- Journal Information:
- Journal of Applied Physics, Vol. 99, Issue 1; Other Information: DOI: 10.1063/1.2150599; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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