Ripple pattern formation on silicon surfaces by low-energy ion-beam erosion: Experiment and theory

Journal Article · Thu Dec 15 04:00:00 EST 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.72.2· OSTI ID:20787772

Ziberi, B; Frost, F; Rauschenbach, B ^[1]; Hoeche, Th ^[1]

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1. Leibniz-Institut fuer Oberflaechenmodifizierung e. V., Permoserstrasse 15, D-04318 Leipzig (Germany)

The topography evolution of Si surfaces during low-energy noble-gas ion-beam erosion (ion energy {<=}2000 eV) at room temperature has been studied. Depending on the ion-beam parameters, self-organized ripple patterns evolve on the surface with a wavelength {lambda}<100 nm. Ripple patterns were found to occur at near-normal ion incidence angles (5 deg. -30 deg.) with the wave vector oriented parallel to the ion-beam direction. The ordering and homogeneity of these patterns increase with ion fluence, leading to very-well-ordered ripples. The ripple wavelength remains constant with ion fluence. Also, the influence of ion energy on the ripple wavelength is investigated. Additionally it is shown that the mass of the bombarding ion plays a decisive role in the ripple formation process. Ripple patterns evolve for Ar{sup +},Kr{sup +}, and Xe{sup +} ions, while no ripples are observed using Ne{sup +} ions. These results are discussed in the context of continuum theories and by using Monte Carlo simulations.

• OSTI ID: 20787772
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 23 Vol. 72; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON
ARGON IONS
COMPUTERIZED SIMULATION
EROSION
EV RANGE
ION BEAMS
KRYPTON
KRYPTON IONS
MONTE CARLO METHOD
NEON
NEON IONS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
WAVELENGTHS
XENON
XENON IONS