Single-crystal growth of Tl{sub 2}Ru{sub 2}O{sub 7} pyrochlore using high-pressure and flux method
- Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Midori-ku, Yokohama, Kanagawa 226-8502 (Japan)
- Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)
- Materials and Structures Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, Kanagawa 226-8502 (Japan)
- Ceramics Research Laboratory, Nagoya Institute of Technology, Tajimi, Gifu 507-0071 (Japan)
Single crystals of the thallium ruthenium pyrochlore have been grown by flux method under high oxygen pressure. The growth conditions were determined by direct observations using in situ powder X-ray diffraction (XRD) method under high pressure and high temperature. The crystals were grown using NaCl-KCl flux at 1350 deg. C and B{sub 2}O{sub 3} flux at 1150 deg. C. High growth temperature of 1350 deg. C for the NaCl-KCl flux caused Pt contamination from the crucible and oxygen deficiency for the crystals obtained. The crystal growth using B{sub 2}O{sub 3} flux proceeded at lower temperature by grain growth with material transfer through B{sub 2}O{sub 3}. The crystal obtained was characterized by single-crystal XRD method, and was found to have a stoichiometric composition, Tl{sub 2}Ru{sub 2}O{sub 7-} {sub {delta}} ({delta}=0), with a structural phase transition around 120 K. The grain growth technique with B{sub 2}O{sub 3} is efficient for high-temperature single-crystal growth under high pressure.
- OSTI ID:
- 20784940
- Journal Information:
- Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 3 Vol. 179; ISSN 0022-4596; ISSN JSSCBI
- Country of Publication:
- United States
- Language:
- English
Similar Records
YBa2Cu3O7-δ Formation by Processing of Laser-Ablated, Fluorine-Free Precursor Films
Microstructure, phase transition, and interfacial chemistry of Gd{sub 2}O{sub 3}/Si(111) grown by electron-beam physical vapor deposition
Related Subjects
BORATES
BORON OXIDES
CRYSTAL GROWTH
GRAIN GROWTH
MONOCRYSTALS
OXIDES
PHASE TRANSFORMATIONS
POTASSIUM CHLORIDES
PYROCHLORE
RUTHENIUM COMPOUNDS
SCANNING ELECTRON MICROSCOPY
SODIUM CHLORIDES
STOICHIOMETRY
SYNTHESIS
TEMPERATURE RANGE 0273-0400 K
THALLIUM COMPOUNDS
X-RAY DIFFRACTION