Growth of high-quality GaAs on Ge/Si{sub 1-x}Ge{sub x} on nanostructured silicon substrates

Journal Article · Mon Jun 19 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2214145· OSTI ID:20779420

Vanamu, G; Datye, A K; Dawson, R; Zaidi, Saleem H ^[1]

---

1. Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States) and Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

Heteroepitaxial growth of GaAs/Ge/SiGe films on submicrostructured Si substrates is reported. One-dimensional, nanometer-linewidth, submicrometer period features were fabricated in Si substrates using interferometric lithography, reactive ion etching, and wet-chemical etching techniques. The quality of the GaAs layers grown on these structures was investigated using high-resolution x-ray diffraction, transmission electron microscopy, scanning electron microscopy, photoluminescence, and etch pit density measurements. The defect density of GaAs epilayers grown on submicrostructured Si at {approx}6x10{sup 5} cm{sup -2} was two orders of magnitude lower compared with that grown on planar silicon. The optical quality of the GaAs/Ge/SiGe on submicrostructured Si was comparable to that of single crystal GaAs.

• OSTI ID: 20779420
• Journal Information: Applied Physics Letters, Vol. 88, Issue 25; Other Information: DOI: 10.1063/1.2214145; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ETCHING
FILMS
GALLIUM ARSENIDES
GERMANIUM
GERMANIUM ALLOYS
GERMANIUM SILICIDES
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NANOSTRUCTURES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION