Plasma-enhanced-chemical-vapor-deposited ultralow k for a postintegration porogen removal approach
- CEA-DRT-LETI--CEA/GRE, 17 Rue Des Martyrs, 30854, Grenoble Cedex 9 (France)
Conventional Cu-ultra low K (ULK) integration schemes lead to a drastic increase of the effective dielectric constant due to porous material degradation during process steps. Although a postintegration porogen removal scheme allows overcoming these issues, only spin-on dielectrics were developed to validate this approach. In this letter, plasma-enhanced chemical-vapor deposition is used to deposit ULK dielectric (k<2.5). The precursor chemistry and the deposition conditions have been chosen to obtain a material with the required characteristics to use a postintegration porogen removal approach: porogen thermal stability up to 325 deg. C, good mechanical properties of the hybrid film, no metallic barrier diffusion in the film, and a minimal shrinkage after the porogen removal treatment.
- OSTI ID:
- 20779231
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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