Laser-induced Ni(Ti) silicide formation
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore) and Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)
Effects of Ti alloying during laser-induced Ni silicide formation is studied. Unique triple layer microstructures were found with the presence of supercell in the NiSi{sub 2} grains formed at the interface. This supercell formation was caused by a local ordering of Ni and Si atoms that favor lower free energy during rapid solidification. Ti rapidly segregates from the alloy melt and forms a protective TiO{sub x} overlayer on the surface during solidification. Melt front progressing towards the Ni-rich region leads to quenching of an amorphous layer sandwiched between NiSi{sub 2} grains and the TiO{sub x} overlayer.
- OSTI ID:
- 20778823
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 11; Other Information: DOI: 10.1063/1.2186073; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nickel silicide formation using multiple-pulsed laser annealing
Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si(001), and strained Si/relaxed SiGe/Si(001) and effect of postthermal annealing
Thin Ni silicide formation by low temperature-induced metal atom reaction with ion implanted amorphous silicon
Journal Article
·
Thu Feb 01 00:00:00 EST 2007
· Journal of Applied Physics
·
OSTI ID:20778823
+3 more
Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si(001), and strained Si/relaxed SiGe/Si(001) and effect of postthermal annealing
Journal Article
·
Sat Jul 15 00:00:00 EDT 2006
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
·
OSTI ID:20778823
+2 more
Thin Ni silicide formation by low temperature-induced metal atom reaction with ion implanted amorphous silicon
Conference
·
Thu Dec 31 00:00:00 EST 1992
·
OSTI ID:20778823
+2 more