Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si

Journal Article · Mon Feb 06 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2172295· OSTI ID:20778679

Boieriu, P; Grein, C H; Velicu, S; Garland, J; Fulk, C; Sivananthan, S; Stoltz, A; Bubulac, L; Dinan, J H ^[1]

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1. EPIR Technologies, Inc., Bolingbrook, Illinois 60440 (United States)

We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by molecular beam epitaxy. Both as-grown and annealed layers doped in situ with indium were hydrogenated. Secondary ion mass spectroscopy confirmed the incorporation of hydrogen. Hall and photoconductive lifetime measurements were used to assess the effects of the hydrogenation. Increases in the electron mobilities and minority carrier lifetimes were observed for almost all ECR conditions.

• OSTI ID: 20778679
• Journal Information: Applied Physics Letters, Vol. 88, Issue 6; Other Information: DOI: 10.1063/1.2172295; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CADMIUM TELLURIDES
CARRIER LIFETIME
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON CYCLOTRON-RESONANCE
ELECTRON MOBILITY
HYDROGEN
INDIUM
ION MICROPROBE ANALYSIS
LAYERS
MASS SPECTROSCOPY
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PLASMA
SEMICONDUCTOR MATERIALS
WAVELENGTHS