Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN
- Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)
This work prepared Al-doped ZnO(AZO) films using dc sputtering to form Schottky contacts onto GaN films with low-temperature-grown GaN cap layer. Application of ultraviolet photodetector showed that spectral responsivity exhibits a narrow bandpass characteristic ranging from 345 to 375 nm. Moreover, unbiased peak responsivity was estimated to be around 0.12 A/W at 365 nm, which corresponds to a quantum efficiency of around 40%. In our study, relatively low responsivity can be explained by the marked absorption of the AZO contact layer. When the reverse biases were below 5 V, the study revealed that dark currents were well below 5x10{sup -12} A even though the samples were annealed at increased temperatures.
- OSTI ID:
- 20778583
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 4; Other Information: DOI: 10.1063/1.2167796; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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