Evidence for p-Type Doping of InN

Journal Article · Fri Mar 31 04:00:00 EST 2006 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.96.125505· OSTI ID:20777124

Jones, R E; Li, S X; Haller, E E ^[1]; Yu, K M; Walukiewicz, W; Ager, J W ^[1]; Lu, H; Schaff, W J ^[2]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)

The first evidence of successful p-type doping of InN is presented. It is shown that InN ratio Mg films consist of a p-type bulk region with a thin n-type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the n-type surface. Irradiation with 2 MeV He{sup +} ions is used to convert the bulk of InN ratio Mg from p to n-type, at which point photoluminescence is recovered. The conversion is well explained by a model assuming two parallel conducting layers (the surface and the bulk) in the films.

• OSTI ID: 20777124
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 96; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTRON DENSITY
ELECTRON MOBILITY
HELIUM IONS
INDIUM NITRIDES
ION BEAMS
LAYERS
MAGNESIUM
MEV RANGE 01-10
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
THIN FILMS