Phase transformations of sputtered ZrV{sub 2} films after annealing and hydrogenation
- Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433 (China)
ZrV{sub 2} thin films were prepared using a direct current (dc)-magnetron-sputtering method. The composition and the phase structure after annealing and hydrogenation were investigated by Rutherford backscattering and x-ray-diffraction technologies. The composition of the films deposited at different substrate temperatures are uniformly distributed along the depth of films. The amorphous phase consisting of Zr and V atoms was achieved when the substrate temperature was less than 400 deg. C. But at high temperatures, e.g., 600 deg. C, the multiphase mixture consisted of C14 (MgZn{sub 2}) and C15 (MgCu{sub 2}) Laves phases, Zr{sub 3}V{sub 3}O, {alpha}-Zr, and V forms. The annealing caused the segregation of Zr and V in the film by strain-driven diffusion and leads to nonhomogeneity, which is the main reason why the multiphase coexists there. With increasing annealing temperature, the amount of the stable C15 phase increases, while the amount of the other C14, {alpha}-Zr, and V phases decreases. Hydrogenation could spur phase transformation from the multiphase structure to a stable Laves structure at relatively low temperature.
- OSTI ID:
- 20777038
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 2; Other Information: DOI: 10.1116/1.2150229; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
AMORPHOUS STATE
ANNEALING
DEPOSITION
DIFFUSION
DIRECT CURRENT
LAVES PHASES
MAGNETRONS
MIXTURES
PHASE TRANSFORMATIONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEGREGATION
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
VANADIUM ALLOYS
X-RAY DIFFRACTION
ZIRCONIUM ALLOYS
ZIRCONIUM-ALPHA