A direct multigroup-WENO solver for the 2D non-stationary Boltzmann-Poisson system for GaAs devices: GaAs-MESFET

Journal Article · Wed Mar 01 04:00:00 EST 2006 · Journal of Computational Physics

DOI:https://doi.org/10.1016/j.jcp.2005.08.003· OSTI ID:20767032

Galler, M ^[1]; Schuerrer, F ^[1]

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1. Institute of Theoretical and Computational Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz (Austria)

We propose a direct solver to the non-stationary Boltzmann-Poisson system for simulating the electron transport in two-dimensional GaAs devices. The GaAs conduction band is approximated by a two-valley model. All of the important scattering mechanisms are taken into account. Our numerical scheme consists of the combination of the multigroup approach to deal with the dependence of the electron distribution functions on the three-dimensional electron wave vectors and a high-order WENO reconstruction procedure for treating their spatial dependences. The electric field is determined self-consistently from the Poisson equation. Numerical results are presented for a GaAs-MESFET. We display electron distribution functions as well as several macroscopic quantities and compare them to those of Monte Carlo simulations. In addition, we study the influence of the used discretization on the obtained results.

• OSTI ID: 20767032
• Journal Information: Journal of Computational Physics, Journal Name: Journal of Computational Physics Journal Issue: 2 Vol. 212; ISSN JCTPAH; ISSN 0021-9991
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMPUTERIZED SIMULATION
DISTRIBUTION FUNCTIONS
ELECTRONS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
MONTE CARLO METHOD
POISSON EQUATION
SPACE DEPENDENCE
THREE-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL CALCULATIONS