Rutherford backscattering spectrometry analysis of TiO{sub 2} thin films

Journal Article · Sat Mar 15 04:00:00 EST 2003 · Materials Characterization

DOI:https://doi.org/10.1016/S1044-5803(03)00084-6· OSTI ID:20748691

Fernandez-Lima, F; Vigil, E; Zumeta, I; Freire, F L; Prioli, R; Pedrero, E

TiO{sub 2} layers grown by microwave-activated chemical bath deposition (MW) and dip coating (DC), as well as by the combination of both techniques, were studied by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). RBS analysis allows the determination of the stoichiometry and the thickness (in atoms/cm{sup 2}) of the TiO{sub 2} layers. TiO{sub 2} layers grown by DC have higher growth rates on a TiO{sub 2} film obtained by MW compared to deposition directly onto an indium-tin oxide (ITO) substrate. TiO{sub 2} layers grown by MW on a film obtained by DC have higher growth rates when compared to layers deposited onto ITO substrates. In this case, AFM analysis shows that the surface is rough and RBS reveals the presence of holes in TiO{sub 2} films.

• OSTI ID: 20748691
• Journal Information: Materials Characterization, Journal Name: Materials Characterization Journal Issue: 2-3 Vol. 50; ISSN 1044-5803; ISSN MACHEX
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DIP COATING
INDIUM
LAYERS
MICROWAVE RADIATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
STOICHIOMETRY
SUBSTRATES
SURFACES
THICKNESS
THIN FILMS
TIN OXIDES
TITANIUM OXIDES