Rutherford backscattering spectrometry analysis of TiO{sub 2} thin films
TiO{sub 2} layers grown by microwave-activated chemical bath deposition (MW) and dip coating (DC), as well as by the combination of both techniques, were studied by Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). RBS analysis allows the determination of the stoichiometry and the thickness (in atoms/cm{sup 2}) of the TiO{sub 2} layers. TiO{sub 2} layers grown by DC have higher growth rates on a TiO{sub 2} film obtained by MW compared to deposition directly onto an indium-tin oxide (ITO) substrate. TiO{sub 2} layers grown by MW on a film obtained by DC have higher growth rates when compared to layers deposited onto ITO substrates. In this case, AFM analysis shows that the surface is rough and RBS reveals the presence of holes in TiO{sub 2} films.
- OSTI ID:
- 20748691
- Journal Information:
- Materials Characterization, Vol. 50, Issue 2-3; Conference: Brazilian Materials Research Society symposia on current trends in nanostructured materials, semiconductor Materials, thin films, and biomaterials, Rio de Janeiro (Brazil), 7-10 Jul 2002; Other Information: DOI: 10.1016/S1044-5803(03)00084-6; PII: S1044580303000846; Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
Similar Records
Quantitative analysis of CN/TiCN/TiN multilayers and their thermal stability by Auger electron spectroscopy and Rutherford backscattering spectrometry depth profiles
Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films