Enhanced beam currents of P{sup 2+}, P{sup 3+}, and P{sup 4+} for use in semiconductor ion implanters

Journal Article · Mon Aug 15 00:00:00 EDT 2005 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.1988181· OSTI ID:20723091

Gushenets, V I; Bugaev, A S; Oks, E M; Hershcovitch, A; Johnson, B M; Kulevoy, T V; Poole, H J; Svarovsky, A Ya ^[1]

---

1. High Current Electronics Institute, Russian Academy of Sciences, Tomsk, 634055 (Russian Federation)

Considerably enhanced yields of P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) were obtained using a modified Bernas-Calutron ion source. The source design, experimental layout, and results of extensive optimization studies are described. The improved production of multiply charged ions is of particular interest for applications in semiconductor ion implantation facilities.

• OSTI ID: 20723091
• Journal Information: Review of Scientific Instruments, Vol. 76, Issue 8; Other Information: DOI: 10.1063/1.1988181; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
BEAM CURRENTS
ION IMPLANTATION
ION SOURCES
OPTIMIZATION
PHOSPHORUS
PHOSPHORUS IONS
SEMICONDUCTOR MATERIALS
YIELDS