Brittle dynamic fracture of crystalline cubic silicon carbide (3C-SiC) via molecular dynamics simulation

Journal Article · Tue Nov 15 04:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2135896· OSTI ID:20719805

Kikuchi, Hideaki; Kalia, Rajiv K; Nakano, Aiichiro; Vashishta, Priya; Branicio, Paulo S; Shimojo, Fuyuki ^[1]

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1. Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803-4020 (United States)

Brittle fracture dynamics for three low-index crack surfaces, i.e. (110) (111), and (100), in crystalline cubic silicon carbide (3C-SiC) is studied using molecular dynamics simulation. The results exhibit significant orientation dependence: (110) fracture propagates in a cleavage manner; (111) fracture involves slip in the {l_brace}111{r_brace} planes; and crack branching is observed in (001) fracture. Calculated critical energy release rates, which characterize fracture toughness, are compared with available experimental and ab initio calculation data.

• OSTI ID: 20719805
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CLEAVAGE
CRACKS
FRACTURE MECHANICS
FRACTURE PROPERTIES
FRACTURES
MOLECULAR DYNAMICS METHOD
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SIMULATION