Magnetic and electronic transport percolation in epitaxial Ge{sub 1-x}Mn{sub x} films
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- INFM-Dipartimento di Fisica, Universita di Camerino, Via Madonna delle Carceri, I-62032 Camerino (Italy)
- INFM-Dipartimento di Fisica, Universita di L'Aquila, Via Vetoio-Coppito, I-67010 L'Aquila (Italy)
- IEN 'G. Ferraris', Via delle Cacce 91, I-10135 Turin (Italy)
Electronic transport and magnetic properties of Ge{sub 1-x}Mn{sub x}/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulatorlike behavior in the whole temperature range and, below about 80 K, two distinct activation energies are observed. At a higher temperature value, T{sub R}, resistivity experiences a sudden reduction. The Hall coefficient shows a strong contribution from the anomalous Hall effect and, at T{sub R}, a sign inversion, from positive to negative, is recorded. The magnetic properties, inferred from magneto-optical Kerr effect, evidence a progressive decrease of the ferromagnetic long range order as the temperature is raised, with a Curie temperature T{sub C} not far from T{sub R}. The transport and magnetic results are qualitatively consistent with a percolation mechanism due to bound magnetic polarons in a GeMn diluted magnetic semiconductor, with localized holes [A. Kaminski and S. Das Sarma, Phys. Rev. B 68, 235210 (2003)].
- OSTI ID:
- 20719643
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 16 Vol. 72; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Spin-wave resonance in Ge{sub 1-x}Mn{sub x} films exhibiting percolation ferromagnetism
Magnetism in MnxGe1-x Semiconductors Mediated by Impurity Band Carriers
Optical, magnetic, and transport behaviors of Ge{sub 1-x}Mn{sub x}Te ferromagnetic semiconductors grown by molecular-beam epitaxy
Journal Article
·
Mon Jun 15 00:00:00 EDT 2009
· Journal of Experimental and Theoretical Physics
·
OSTI ID:21246876
Magnetism in MnxGe1-x Semiconductors Mediated by Impurity Band Carriers
Journal Article
·
Fri Dec 31 23:00:00 EST 2004
· Physical Review B
·
OSTI ID:976000
Optical, magnetic, and transport behaviors of Ge{sub 1-x}Mn{sub x}Te ferromagnetic semiconductors grown by molecular-beam epitaxy
Journal Article
·
Mon Sep 15 00:00:00 EDT 2008
· Journal of Applied Physics
·
OSTI ID:21182637
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CURIE POINT
ELECTRIC CONDUCTIVITY
EPITAXY
FERROMAGNETIC MATERIALS
FILMS
GERMANIUM
GERMANIUM COMPOUNDS
HALL EFFECT
HOLES
KERR EFFECT
LAYERS
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
MAGNETO-OPTICAL EFFECTS
MANGANESE COMPOUNDS
POLARONS
TEMPERATURE DEPENDENCE
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CURIE POINT
ELECTRIC CONDUCTIVITY
EPITAXY
FERROMAGNETIC MATERIALS
FILMS
GERMANIUM
GERMANIUM COMPOUNDS
HALL EFFECT
HOLES
KERR EFFECT
LAYERS
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
MAGNETO-OPTICAL EFFECTS
MANGANESE COMPOUNDS
POLARONS
TEMPERATURE DEPENDENCE