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Magnetic and electronic transport percolation in epitaxial Ge{sub 1-x}Mn{sub x} films

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
; ; ;  [1]; ;  [2]; ;  [3]
  1. INFM-Dipartimento di Fisica, Universita di Camerino, Via Madonna delle Carceri, I-62032 Camerino (Italy)
  2. INFM-Dipartimento di Fisica, Universita di L'Aquila, Via Vetoio-Coppito, I-67010 L'Aquila (Italy)
  3. IEN 'G. Ferraris', Via delle Cacce 91, I-10135 Turin (Italy)
Electronic transport and magnetic properties of Ge{sub 1-x}Mn{sub x}/Ge(100) films are investigated as a function of Mn dilution. Depending on x, characteristic temperatures separate different regimes in both properties. Resistivity exhibits an insulatorlike behavior in the whole temperature range and, below about 80 K, two distinct activation energies are observed. At a higher temperature value, T{sub R}, resistivity experiences a sudden reduction. The Hall coefficient shows a strong contribution from the anomalous Hall effect and, at T{sub R}, a sign inversion, from positive to negative, is recorded. The magnetic properties, inferred from magneto-optical Kerr effect, evidence a progressive decrease of the ferromagnetic long range order as the temperature is raised, with a Curie temperature T{sub C} not far from T{sub R}. The transport and magnetic results are qualitatively consistent with a percolation mechanism due to bound magnetic polarons in a GeMn diluted magnetic semiconductor, with localized holes [A. Kaminski and S. Das Sarma, Phys. Rev. B 68, 235210 (2003)].
OSTI ID:
20719643
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 16 Vol. 72; ISSN 1098-0121
Country of Publication:
United States
Language:
English