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Title: Pressure/temperature/substitution-induced melting of A-site charge disproportionation in Bi{sub 1-x}La{sub x}NiO{sub 3} (0{<=}x{<=}0.5)

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
;  [1];  [1]; ;  [2];  [3]; ;  [3]; ;  [4];  [5]
  1. Institute for Chemical Research, Kyoto University, Gokashou, Uji 611-0011 (Japan)
  2. PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012 (Japan)
  3. JASRI, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo 679-5198 (Japan)
  4. Department of Applied Physics, Nagoya University, Furo-cho, Chigusa-ku, Nagoya 464-8601 (Japan)
  5. Department of Applied Physics, Waseda University, Ookubo, Shinjuku, Tokyo 169-8555 (Japan)

Metal-insulator transitions strongly coupled with lattice were found in Bi{sub 1-x}La{sub x}NiO{sub 3}. Synchrotron x-ray powder diffraction revealed that pressure (P{approx}3 GPa, T=300 K), temperature (T{approx}340 K, x=0.05), and La substitution (x{approx}0.075, T=300 K) caused the similar structural change from a triclinic (insulating) to an orthorhombic (metallic) symmetry, suggesting melting of the A-site charge disproportionation. Comparing crystal structure and physical properties with the other ANiO{sub 3} series, an electronic state of the metallic phase can be described as [A{sup 3+}L lowbar {sup {delta}}, Ni{sup 2+}L lowbar {sup 1-{delta}}], where a ligand-hole L lowbar contributes to a conductivity. We depicted a schematic P-T phase diagram of BiNiO{sub 3} including a critical point (3 GPa, 300 K) and an inhomogeneous region, which implies universality of ligand-hole dynamics in ANiO{sub 3} (A=Bi, Pr, Nd... )

OSTI ID:
20719158
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 72, Issue 4; Other Information: DOI: 10.1103/PhysRevB.72.045104; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
Country of Publication:
United States
Language:
English