Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K

Journal Article · Fri Jul 15 04:00:00 EDT 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.72.035203· OSTI ID:20719145

Vlasenko, L S; Watkins, G D ^[1]

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1. Department of Physics, Lehigh University, 16 Memorial Drive East, Bethlehem, Pennsylvania 18015-3182 (United States)

Intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K are studied by optical detection of electron paramagnetic resonance (ODEPR). Observed in the photoluminescence (PL) are ODEPR signals, which are identified with the oxygen vacancy, V{sub O}{sup +}, interstitial zinc, Zn{sub i}{sup +}, and zinc-vacancy-zinc-interstitial Frenkel pairs. The Frenkel pairs are primarily observed in their S=1 exchange-coupled state, supplying strong evidence that interstitial zinc is a shallow effective mass double donor in ZnO. Annealing stages at {approx}65-119 K and {approx}145-170 K are observed for the defects associated with the zinc sublattice and are identified with the migration of interstitial zinc. Although interstitial oxygen is not observed in the ODEPR, a higher-temperature annealing stage observed in the PL at {approx}160-230 K is tentatively identified with the onset of its migration. The oxygen vacancy is stable to {approx}400 deg. C. The relationship between the spin-dependent processes producing the ODEPR signals and the PL of the material remains unclear.

• OSTI ID: 20719145
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 3 Vol. 72; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
EFFECTIVE MASS
ELECTRON BEAMS
ELECTRON SPIN RESONANCE
ELECTRONS
FRENKEL DEFECTS
INTERSTITIALS
IRRADIATION
MEV RANGE
MICROWAVE RADIATION
OXYGEN
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SPIN
ZINC
ZINC OXIDES