Strength, elasticity, and equation of state of the nanocrystalline cubic silicon nitride {gamma}-Si{sub 3}N{sub 4} to 68 GPa

Journal Article · Fri Jul 01 04:00:00 EDT 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.72.014102· OSTI ID:20719098

Kiefer, Boris; Shieh, Sean R; Duffy, Thomas S; Sekine, Toshimori ^[1]

---

1. Physics Department, New Mexico State University, Las Cruces, New Mexico 88003 (United States)

Lattice strains in nanocrystalline cubic silicon nitride were measured using an energy-dispersive x-ray diffraction technique under nonhydrostatic stress conditions up to a confining pressure of 68 GPa. The high-pressure elastic properties of {gamma}-Si{sub 3}N{sub 4} were also investigated theoretically using density-functional theory. The differential stress t between 30 and 68 GPa increases from 7 to 23 GPa and can be described beyond 40 GPa as t=7(4)+0.24(7)P where P is the pressure in GPa. The differential stress supported by {gamma}-Si{sub 3}N{sub 4} increases with pressure from 3.5% of the shear modulus at 21 GPa to 7.6% at 68 GPa. {gamma}-Si{sub 3}N{sub 4} is one of the strongest materials yet studied under extreme compression conditions. The elastic anisotropy of {gamma}-Si{sub 3}N{sub 4} is large and only weakly pressure dependent. The elastic anisotropy increases from A=1.4 to A=1.9 as the parameter {alpha} that characterizes stress-strain continuity across grain boundaries is decreased from 1 to 0.5. The high elastic anisotropy compares well with our first-principles calculations that lead to A=1.92-1.93 at ambient pressure and A=1.94-1.95 at 70 GPa. Using molybdenum as an internal pressure standard, the equation of state depends strongly on {psi}, the direction between the diamond cell axis and the normal of the scattering plane. The bulk modulus increases from 224(3) GPa to 460(13) GPa as {psi} varies from 0 deg. to 90 deg. This large variation highlights the need to account properly for deviatoric stresses in nonhydrostatic x-ray diffraction experiments carried out at angles other than the particular angle of {psi}=54.7 deg., where deviatoric stress effects on the lattice vanish. At this angle we find a bulk modulus of 339(7) GPa (K{sub 0}{sup '}=4, fixed). This result is in general agreement with our local density approximation calculations, K{sub 0}=321 GPa, K{sub 0}{sup '}=4.0, and previous shockwave and x-ray diffraction studies. However, our results are significantly lower than the recently reported bulk modulus of K{sub 0}=685(45) GPa for nanocrystalline {gamma}-Si{sub 3}N{sub 4} below 40 GPa.

• OSTI ID: 20719098
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 1 Vol. 72; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
COMPARATIVE EVALUATIONS
CRYSTALS
DENSITY FUNCTIONAL METHOD
ELASTICITY
EQUATIONS OF STATE
GRAIN BOUNDARIES
MOLYBDENUM
NANOSTRUCTURES
PRESSURE DEPENDENCE
PRESSURE RANGE GIGA PA
SILICON NITRIDES
STRAINS
STRESS ANALYSIS
STRESSES
X-RAY DIFFRACTION