Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe
- Chernovtsy National University, Chernovtsy, 58012 (Ukraine)
The electrical characteristics of CdTe-based Schottky-diode detectors of X-ray and {gamma} radiation are studied. Experimental data are obtained for Al/p-CdTe diodes with a substrate resistivity from 10{sup 2} to 10{sup 9} {omega} cm (300 K). The obtained results are interpreted in the context of the Sah-Noyce-Shockley theory of generation-recombination, taking into account the special features of the Schottky diode. It is shown that, when semi-insulating CdTe is used, the considerable forward currents observed are caused by electron injection into the substrate.
- OSTI ID:
- 20718985
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 39; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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