Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors with Submicrometer Grain Sizes
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
A numerical model for the calculation of the electrical characteristics of polycrystalline ceramic semiconductors is suggested. The model is applicable in a situation where the average grain size is comparable with the depletion region width near a grain boundary and the double Schottky barriers of neighboring boundaries overlap. The two-dimensional calculation is carried out in the diffusion-drift approximation using the Voronoi grid method. The effect of crystalline grain size on the current-voltage characteristic and specific capacitance of the material is analyzed using p-SrTiO{sub 3} as an example.
- OSTI ID:
- 20718899
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 39; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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