Swelling of SiC under helium implantation

Journal Article · Thu Dec 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2137441· OSTI ID:20714146

Leclerc, S; Declemy, A; Beaufort, M F; Tromas, C; Barbot, J F ^[1]

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1. Laboratoire de Metallurgie Physique UMR6630, Universite de Poitiers, SP2MI, Bd M. et P. Curie, BP30179, F-86960 Futuroscope-Chasseneuil Cedex (France)

Single crystals 4H-SiC were implanted with 50 keV helium ions at temperatures up to 600 deg. C and fluences in the range 1x10{sup 16}-1x10{sup 17} cm{sup -2}. The helium implantation-induced swelling was studied through the measurement of the step height. The different contributions of swelling were determined by combining simulations of x-ray diffraction curves and transmission electron microscopy observations. At room temperature, amorphization occurs between 1 and 2x10{sup 16} cm{sup -2}, inducing the decrease in density of about 15%. For high-temperature implants, amorphization does not occur. The strain profiles show saturation in the near-surface region, indicating that a threshold concentration of defects is reached. All the additional point defects created during the implantation have been supposed to annihilate. In the region of high-energy deposition density, the value of strain increases with fluence up to values larger than 6%. The elastic contribution to swelling has been obtained by integration of the strain profile determined by x-ray diffraction simulations. Then, the contribution of helium bubbles to the step height is found to be linear with the fluence: 0.8 nm/10{sup 16} He/cm{sup 2}.

• OSTI ID: 20714146
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 11; Other Information: DOI: 10.1063/1.2137441; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BUBBLES
COMPUTERIZED SIMULATION
HELIUM
HELIUM IONS
ION IMPLANTATION
KEV RANGE 10-100
MONOCRYSTALS
POINT DEFECTS
SATURATION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
STRAINS
SWELLING
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION