Simplified modeling of 13.5 nm unresolved transition array emission of a Sn plasma and comparison with experiment
- School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)
One key aspect in the drive to optimize the radiative output of a laser-produced plasma for extreme ultraviolet lithography is the radiation transport through the plasma. In tin-based plasmas, the radiation in the 2% bandwidth at 13.5 nm is predominantly due to 4d-4f and 4p-4d transitions from a range of tin ions (Sn{sup 7+} to Sn{sup 12+}). The complexity of the configurations involved in these transitions is such that a line-by-line analysis is, computationally, extremely intensive. This work seeks to model the emission profiles of each ion by treating the transition arrays statistically, thus greatly simplifying radiation transport modeling. The results of the model are compared with experimental spectra from tin-based laser-produced plasmas.
- OSTI ID:
- 20714138
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 11; Other Information: DOI: 10.1063/1.2128055; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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