The role of the chemical nature of implanted species on quenching and recovery of photoluminescence in ion-irradiated porous silicon
- Materials Science and Technology Division, Los Alamos National Laboratory, MST-8 G755, Los Alamos, NM 87545 (United States)
The effects of ion irradiation on porous Si (po-Si) photoluminescence (PL) have been investigated. Specimens were progressively irradiated with H{sup +} and He{sup +} ions followed by PL measurements. After the final irradiation, which resulted in total PL quenching, PL recovery was monitored for more than 200 days. The behavior of both PL quenching and recovery was correlated to the amount of retained irradiation-induced damage, determined by channeling spectrometry measurements, and to the chemical nature of the implanted species. Quenching was attributed to the generation of defects that create nonradiative states within the gap, while recovery was attributed to the passivation of these defects by atmospheric exposure. H{sup +} irradiation is approximately five times more efficient in quenching PL and leads to approximately four times lower recovery rate than He{sup +} irradiation. This behavior is attributed to the formation of stable H-defect complexes.
- OSTI ID:
- 20714137
- Journal Information:
- Journal of Applied Physics, Vol. 98, Issue 7; Other Information: DOI: 10.1063/1.2081118; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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