Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence

Journal Article · Mon Aug 01 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1997289· OSTI ID:20714015

Klockenkaemper, R; Becker, M; Bohlen, A von; Becker, H W; Krzyzanowska, H; Palmetshofer, L ^[1]

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1. Institute for Analytical Sciences (ISAS), Bunsen-Kirchhoff-Strasse 11, 44139 Dortmund (Germany)

The implantation of ions in solids is of high technical relevance. The different effects within the solid target caused by the ion bombardment can be investigated by depth profiling of near-surface layers. As and Co ions were implanted in Si wafers: As ions with a fluence of 1x10{sup 17}/cm{sup 2} and an energy of 100 keV and Co ions with 1x10{sup 16}/cm{sup 2} at 25 keV. Subsequently depth profiling was carried out by Rutherford backscattering spectrometry as well as by total-reflection x-ray fluorescence analysis which was combined with differential weighing and interferometry after repeated large-surface sputter etching. Over and above the amorphization of the Si crystal, two other essential effects were observed: (i) a swelling or expansion of the original Si crystal in the near-surface region, in particular in the case of the As implantation, and (ii) a shrinking or compression of the Si crystal for deeper sublayers especially distinct for the Co implantation. On the other hand, a high surface enrichment of implanted ions was found for the As implantation while only a low surface concentration was detected for the Co implantation.

• OSTI ID: 20714015
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 3; Other Information: DOI: 10.1063/1.1997289; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ARSENIC IONS
COBALT IONS
COMPRESSION
EMISSION SPECTRA
ETCHING
EXPANSION
FLUORESCENCE
INTERFEROMETRY
ION DENSITY
ION IMPLANTATION
KEV RANGE 10-100
LAYERS
REFLECTION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SWELLING
X-RAY FLUORESCENCE ANALYSIS
X-RAY SPECTRA