Epitaxial growth on silicon and characterization of MnF{sub 2} and ZnF{sub 2} layers with metastable orthorhombic structure
Journal Article
·
· Journal of Applied Physics
- Ioffe Physico-Technical Institute Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
The growth of MnF{sub 2} and ZnF{sub 2} layers on Si(001) and Si(111) substrates was studied by molecular-beam epitaxy. Calcium fluoride buffer layers with (001) (110), and (111) orientations were used to prevent chemical interaction of MnF{sub 2} and ZnF{sub 2} molecules with the Si substrate. The analysis of x-ray and reflection high-energy electron-diffraction (RHEED) patterns showed that MnF{sub 2} layers grow on all of these planes in the orthorhombic {alpha}-PbO{sub 2}-type crystal phase observed earlier only at high pressures and temperatures. Atomic force microscopy revealed a strong dependence of the surface morphology on the buffer orientation and growth temperature. The best-ordered MnF{sub 2} growth occurred at 500 deg. C on a CaF{sub 2} (110) buffer layer. The diffraction analysis enabled us to find the epitaxial relations at the MnF{sub 2}/CaF{sub 2} interface. A careful analysis of the RHEED patterns of the films grown on CaF{sub 2}(001) showed a similarity in the structure and growth modes between MnF{sub 2} and ZnF{sub 2} layers, with ZnF{sub 2} tending to form multiphase layers. These findings are in agreement with the x-ray diffraction measurements.
- OSTI ID:
- 20713952
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ANTIFERROMAGNETIC MATERIALS
ATOMIC FORCE MICROSCOPY
CALCIUM FLUORIDES
CRYSTAL GROWTH
ELECTRON DIFFRACTION
INTERFACES
LAYERS
LEAD OXIDES
MANGANESE FLUORIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
ORIENTATION
ORTHORHOMBIC LATTICES
REFLECTION
SILICON
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
X-RAY DIFFRACTION
ZINC FLUORIDES
ANTIFERROMAGNETIC MATERIALS
ATOMIC FORCE MICROSCOPY
CALCIUM FLUORIDES
CRYSTAL GROWTH
ELECTRON DIFFRACTION
INTERFACES
LAYERS
LEAD OXIDES
MANGANESE FLUORIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
ORIENTATION
ORTHORHOMBIC LATTICES
REFLECTION
SILICON
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
X-RAY DIFFRACTION
ZINC FLUORIDES