Improvement of interfacial and dielectric properties of sputtered Ta{sub 2}O{sub 5} thin films by substrate biasing and the underlying mechanism
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
The use of tantalum pentoxide (Ta{sub 2}O{sub 5}) thin films as advanced gate dielectrics in integrated circuits has been hampered by thermodynamic instability at the Ta{sub 2}O{sub 5}/Si interface. We have demonstrated the fabrication of crystalline Ta{sub 2}O{sub 5} thin films on n-type Si (100) at lower substrate temperature by means of substrate biasing. In the work reported here, the influence of the substrate bias on the interfacial and dielectric characteristics of the Ta{sub 2}O{sub 5} thin films is investigated in details. Our results show that by applying a suitable bias to the Si substrate, the dielectric properties of Ta{sub 2}O{sub 5} thin films can be improved. Using a substrate bias of -200 V, the thin film has a permittivity of 34 and leakage current density of 10{sup -7} A/cm{sup 2} at an electric field of 800 kV/cm. The effects and mechanism of the bias on the interfacial and dielectric characteristics are described.
- OSTI ID:
- 20711727
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 11; Other Information: DOI: 10.1063/1.1922585; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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